TS-C series spectral confocal displacement sensor

In the manufacturing of integrated circuits, the use of large-sized silicon wafers is becoming increasingly common to increase capacity and reduce costs. At the same time, in order to improve chip performance and packaging density, the development of 3D packaging technology requires thinning of large-sized silicon wafers. The residual stress generated during the thinning process can cause the silicon wafer to warp, leading to an increase in chip breakage during transportation and subsequent processing. The warpage of silicon wafers is an important technical indicator for evaluating the quality of silicon wafer processing, and is also an important basis for analyzing residual stress in silicon wafer processing and optimizing thinning processes. In the application of quartz wafers, most of them are processed in a flat state, and there is an urgent need to eliminate the influence of gravity deformation on the measurement data, especially WARP and BOW values. The data of the original wafer surface shape is more valuable than the data after gravity deformation. The measurement results after gravity deformation vary greatly depending on the placement method and are difficult to be used as a standard. Therefore, a new solution is to test the wafer in a vertical state to address the issue of accuracy being affected by gravity during testing.
The TS-C series spectrum confocal displacement sensor from Chusin Intelligence can measure the flatness and warpage of wafers with sizes up to 12 inches by using a motion device for thickness measurement.